MAX2601, MAX2602 3.6V、1W RF功率晶

MAX2601, MAX2602 3.6V、1W RF功率晶体管，适合900MHz应用

MAX2601, MAX2602 概述

The MAX2601/MAX2602 are RF power transistors optimized for use in portable cellular and wireless equipment that operates from three NiCd/NiMH cells or one Li-Ion cell. These transistors deliver 1W of RF power from a 3.6V supply with efficiency of 58% when biased for constant-envelope applications (e.g., FM or FSK). For NADC (IS-54) operation, they deliver 29dBm with -28dBc ACPR from a 4.8V supply.

The MAX2601 is a high-performance silicon bipolar RF power transistor. The MAX2602 includes a high-performance silicon bipolar RF power transistor, and a biasing diode that matches the thermal and process characteristics of the power transistor. This diode is used to create a bias network that accurately controls the power transistor's collector current as the temperature changes.

The MAX2601/MAX2602 can be used as the final stage in a discrete or module power amplifier. Silicon bipolar technology eliminates the need for voltage inverters and sequencing circuitry, as required by GaAsFET power amplifiers. Furthermore, a drain switch is not required to turn off the MAX2601/MAX2602. This increases operating time in two ways: it allows lower system end-of-life battery voltage, and it eliminates the wasted power from a drain-switch device.

The MAX2601/MAX2602 are available in thermally enhanced, 8-pin SO packages, which are screened to the extended temperature range (-40°C to +85°C). The MAX2602 is also available in die form.

max2602/MAX2601 pdf datasheet

MAX2601, MAX2602 关键特性

Low Voltage: Operates from 1 Li-Ion or 3 NiCd/NiMH Batteries

DC-to-Microwave Operating Range

1W Output Power at 900MHz

On-Chip Diode for Accurate Biasing (MAX2602)

Low-Cost Silicon Bipolar Technology

Does Not Require Negative Bias or Supply Switch

High Efficiency: 58%

MAX2601, MAX2602 应用/使用

 915MHz ISM发送器
 AMPS蜂窝电话
 CDPD调制解调器
 数字蜂窝电话

 陆地移动无线装置
 微蜂窝GSM (5类功率)
 窄带PCS (NPCS)
 双向寻呼
 

MAX2601, MAX2602 应用电路

适合功率晶体管MHzRF

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